Today`s flash memory is not practical for the lagging pace of development of integrated circuits, such as central processing units - always a transition to new manufacturing technology, allowing you to create all the more miniature the device is constantly decreasing the cost of chips, increasing the information capacity, etc. However, the development of flash memory has its limitations, and according to estimates, by 2012 will reach the limit miniaturization of chips - as the top strip is called the 20-nm tehprotsess. As trained scientists and researchers as a substitute for common today, flash memory ? Among the possible candidates for this role are called memory based on phase transitions, the so-called race-track-memory, however, there is another newcomer who can change the flash on the throne of the most popular storage devices. It goes on the memory-based graph - thin sheets of carbon thickness of only a few atoms. So far, researchers have learned how to form sheets of carbon structure, the thickness of ten atomic layers, and such structures are placed on silicon substrate. Note that the deposition of carbon atoms takes place from the gas phase. According to the developers, Professor James Tour (James Tour) from Rice University and his colleagues experimented started more than a year ago, but the first concrete information on performance scholars have published more recently. The main advantages of this technology is not only the possibility of creating a very small memory cells, but very little currents passing through the cell memory in her off. This allows you to create memory cells that can store large amounts of information - now developers can create a flash-memory based on multilevel cell, capable of storing up to three bits of information. In the future, it will be possible to create a much larger device, which will increase the capacity of future generations. However, the remaining features of:the possibility of reaching the highest speed access to memory up to 1 or 10 nanoseconds, which is comparable to that of SRAM-memory, and even surpasses them the opportunity to work on a much wider range of temperatures (up to two degrees Celsius scale);ability to work in harsh conditions under the influence of radiation. The latter is particularly important in the case of aerospace electronics, where devices must withstand considerable pressure - have to use sophisticated protection system, which in the case of advanced memory can be simplified.
