In the past the year 2008 for the first time in the world market have a set of system logic to support the work of RAM standard DDR3, more productive than its predecessor. But as often happens in such cases, the new operativka remained only choice for enthusiasts who are able to put more than one hundred dollars for a DDR3-kit. For the same reason, and the company AMD in no hurry to release its own processors with integrated controller the new standard - pozitsioniruya its decisions in the sector srednetsenovyh and developers of low-cost systems are not able to go to an expensive memory for enthusiasts. Everything must change for the better in the coming 2009, when the price of DDR3-memory will begin to decline sharply.
One reason to speak confidently about the imminent decline in the value of the devices is to move the leading manufacturers of integrated circuits for DRAM-greater precision manufacture microchips. Here, first of all, it is worth noting the progress the companies Samsung and Elpida, which has already promised this month to begin mass production of DDR3-memory of 50-nm process technology, in this case will have immersionnaya lithography to reduce the size of the elements of an integrated circuit with the use of radiation with the same wavelength - 193 nanometers. Another technological innovation becomes a shift to the formation of copper conductive elements, instead of the standard aluminum - it will allow developers to improve the performance of finished products.
For comparison, is the following figures. Go to the 50-nm technology will reduce the size of a standard DRAM-chips up to 40 square meters. mm, thus increasing the output of microchips with a silicon plate, and thus reducing the cost of manufacture of semiconductor devices. As for the performance of chips, the developers expect to increase the speed settings of memory by 25%.
On the basis of the technology the Japanese company Elpida plans to produce microchips information capacity of 1 Gbit (at first, then will be put in place to issue and larger devices) capable of operating as a voltage of 1, 5 Volt (information rate is 2, 5 Gb/s) and in economy mode, with operating voltage 1, 2 V (data transfer rate is reduced to 1, 6 Gb/s). In turn, the company Samsung plans to release more capacious device, up to 2 Gb of data, and performance chips will be 60% higher than in the case of DDR2-memory.
As for the other manufacturers of integrated circuits of RAM, the progress made and the company Qimonda, concluded the preparation of microarray technology for 46-nm technological processes. However, DDR3-product of a series chipmeyker expects to launch in mid-2009.
The upsurge in demand for integrated circuits DDR3 memory standard is expected in connection with access to the market about the latest low-cost central processing units - in the case of AMD it microchips connector Socket AM3, and in the case of Intel - processors Lynnfield. As a result, in 2009, the proportion of sales of DDR3-memory market DRAM-chips will be 29%, and in 2011, these figures will increase up to 72% - the transition to DDR3 will take to complete.