In February of next year a very interesting conference of International Solid State Circuits Conference (ISSCC), dedicated to the achievements of developers in the field of advanced integrated circuits very different purpose. Despite the fact that the event will take place only a few months later, all the leaders have already prepared their own programs and reports that their representatives be made at ISSCC.
South Korean company Samsung plans to describe its development in the area of memory chips - its staff a DRAM-capacity device 8 Gb and 4 Gb. Interestingly, the manufacture of devices identified by the use of such technology, such as vertical overlay, which formed three-dimensional structure of integrated circuit, allowing, for example, greatly increase the capacity of storage devices. It is predicted that such technology after a series of additional research and development, will be one of the most common techniques used in the manufacture of microchips for different purposes.
The same technology used by the Japanese company Toshiba to create fotomoduley based on CMOS-sensor that allows for significantly reducing the size and cost of the final product. NEC, in turn, applies the technology of three-dimensional microchips for the manufacture of static memory (SRAM), a highly integrated system-on-chip (SoC).
As for the world`s largest chipmeykera companies Intel, it is waiting for us to a number of reports of the design and manufacture a new generation of microprocessors - will be discussed on the eight decisions, consisting of 2, 3 billion transistors, which should become one of the most complex of previously issued integrated circuits. By the way, a unique eight chips should appear in the global market in late 2009. Tell Intel and the recently released family of processors Nehalem, as well as shed light on future server chips Itanium.
Separately worth mentioning interesting reports about Intel, vosmidesyatiyadernogo to develop microchip, in particular, will be affected by the prospects for optical interconnect to transfer data between the main blocks of integrated circuits.