Column will be the basis for the next generation memory

April 1, 2009, 10:46 am

   Check box and the finest sheets of carbon atoms, consisting of two-dimensional hexagonal crystal lattice, are already used by scientists in projects to build high-speed integrated circuits, transparent electrode for flexible displays, etc. . And the last work of researchers of National University of Singapore show that the graph can be used as a basis for high-speed storage devices.
The advantages grafenovoy memory will be:the highest rate of information transfer and a much higher density of placement, rather than achieved in the case of usual magnetic memory used today in the case of hard disks. Recall that in the case of magnetic disks used magnetization domains in one of two directions, one of which is set for the unit and the second for a zero. In the case of memory-based graph is changing the material characteristics such as conductivity/resistance.
Changing the basic parameters of the memory on the basis of the graph has been very simple way - a magnetic field, which switches the material from one state to another. A fairly thin and a tool to implement on/off the magnetic field. This tool is a thin layer ferroelektrika, besieged the top layer of the graph. Ferroelektrik has its own magnetic field, and applied a voltage to it is possible to change the direction of the field, which in turn changes the resistance of a graph.
The design of the next generation memory is remarkable that it`s very easy to manufacture. In addition, the behavior ferroelektrikov already very well known, and hence the problems with the manager layer, switching memory cell, there should be no.
now is to examine the substantive merits grafenovoy memory. According to the records of researchers, the speed of reading the information can be increased to thirty-fold compared with the same parameter for a magnetic memory. Information grafenovoy memory capacity several times higher than for a magnetic memory. Affected by the fact that the magnetic memory cell size can be reduced to 25 nm, while the size of memory cells on the basis of the graph will be less than 10 nm.
But despite all the scientific advances, while a project to establish grafenovoy memory is at a very early stage. At this time, the researchers manipulated grafenovymi sheet size of about 2 micrometers, which are located on the silicon substrate. By the layer graph connect two electrodes, and the top layer is formed ferroelektrika. But even if this is very rough, the device data transfer rate of up to five times higher than the parameter for a magnetic memory. However, there is work still to increase the resource of the grafenovoy memory - until the device can withstand about 100 thousand cycles conductivity. For comparison, modern memory withstand more than a million cycles of recording/dubbing.


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