A diamond light-emitting diode operating at 400 ° C

 
March 31, 2009, 7:35 am

a diamond light-emitting diode operating at 400  ca diamond light-emitting diode operating at 400  c 
a diamond light-emitting diode operating at 400  c   Japanese National Institute of Advanced Science and Technology (National Institute of Advanced Industrial Science and Technology, AIST) has developed a light-emitting diode (LED) the far UV radiation (deep UV ), which uses a diamond semiconductor. LED far-UV radiation is made up of 2-mm square diamond substrate, on which the diamond semiconductor. This device provides far-UV radiation with a wavelength of 235 nm. Power at a current of 320 mA is 30 mkVt.
The LED is very close to practical use, - said Satosi Yamasaki (Satoshi Yamasaki), chief researcher of the Research Institute of Energy, with AIST and professor at the University of Tsukuby. According to AIST, the new LED has two major differences. The first is the luminous efficiency, which increases even when the current large size. The second - an outstanding thermostability.
In particular, when the current density of greater than 2 000 A/sm2, applied to the electrode diameter of 120 microns, luminous efficiency continues to increase without saturation effect, according to AIST. At this time, the working current density LEDs far UV radiation from AlGaN-semiconductors limited to 500 A/sm2. The high temperature characterized by the fact that when the temperature rises from room to 420 ° C, the intensity svetoizlucheniya not reduced, and continues to grow.
In contrast to conventional diamond light-emitting diodes LED emit light due to the generation of excitons. Exciton is an electron-hole pair, which behaves as one of the types of particles. In particular, they are sensitive to temperature and often break up at high speed. However, diamond LED-generated excitons are very stable and not destroyed up to 600 ° C, - said Tosiharu Makin (Toshiharu Makino), a researcher from the Research Institute of Energy in the AIST. This is the main cause of high resistance to high temperature.
As long as there are some problems in the commercialization of diamond light-emitting diodes. Not only because of the fact that the diamond substrates are very expensive, but because the available substrate to the size of a few square millimeters. However, the developers claim that has already developed a way of stacking semiconductor polycrystalline diamond film on silicon substrate. The prototype, created using this new technology, the efficiency is only an order of magnitude lower than that of the light-emitting diodes - Makin said. Since this requires a relatively affordable materials such as silicon and methane, this technology can become a reality, and the production of diamond light-emitting diodes will have a very low cost.

 

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