Toshiba and SanDisk a third lower output flash memory
December 16, 2008, 12:10 pm
The situation in the market of integrated circuits flash memory is difficult to call favorable for the expansion of the leading producers of their own production facilities - despite the growing demand for NAND-memory used in the manufacture of drives for portable electronics and promising SSD-devices, the prices of the type of products so low that approaching the cost of manufacturing chips. In these circumstances, major players are trying to overcome the crisis and reduce the volume of relevant products. It is at such an act decided to guide companies Toshiba and SanDisk, which reported coming optimize production processes factories Fab 3 and Fab. According to information provided by Toshiba and SanDisk, the modifications made in the two factories will lead to a decline in output of NAND-memory immediately by 30%. However, even before the optimization of the two factories referred to fully suspend production of the products immediately to thirteen days - with 31 Dec. , 2008 to 12 January 2009. noted that the production facilities outside the industrial complex Yokkaichi Operations, consisting of whom also appear on two more factories Fab 1 and Fab 2. The latest issue of implementing flash products manufactured from 200-millimeter silicon wafers, while factory Fab 3 and Fab 4 better, and using 300-mm wafers. However, and the Fab 1 and Fab 2 to temporarily suspend production of NAND-memory for four days - from December 31, 2008 to January 3, 2009. But even such emergency measures, according to analysts, will not lead to a marked effect in early 2009 - the price of NAND-memory in the next few months will remain negative momentum. Changing market conditions in the best way for producers will not occur before the second half of 2009. Will the restored former production flash memory companies Toshiba and SanDisk after 2009 are not yet known - a lot depends on market conditions, which analysts the two companies will be an increased emphasis.